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| Power Transistor Array STA463C Absolute Maximum Ratings (Ta=25C) Symbol VCBO VCEO VEBO IC IB PT Tj Tstg Ratings 11510 11510 6 6 (pulse 10) 1 3.2 (Ta=250C) 18 (Tc=25C) 150 -55 to +150 Unit V V V A A W W C C Electrical Characteristics Symbol ICBO IEBO VCEO hFE VCE (sat) VFEC Es/b Test Conditions VCB = 105V VEB = 6V IC = 50mA VCE = 1V, IC = 1A IC = 1.2A, IB = 12mA IFEC = 6A L = 10mH, single pulse Ratings 10max 10max 105 to 125 400 to 1500 0.12max 1.5max 45min 0.2 0.2 9.0 0.2 (Ta=25C) Unit A A V V V mJ External Dimensions STA4 (LF400B) 25.25 0.2 b a 11.3 4.7 0.5 2.3 1.0 0.25 0.5 0.15 (2.54) Typical Switching Characteristics VCC (V) 12 RL () 12 IC (A) 1 VBB1 (V) 10 VBB2 (V) -5 IB1 (mA) 30 IB2 (mA) -30 ton (s) 0.2 tstg (s) 5.7 tf (s) 0.4 C1.5 0.5 9*2.54=22.86 0.05 0.15 0.2 1234 BCE 5 6 7 8 9 10 BCE a) Type No. b) Lot No. (Unit: mm) s IC -- VCE Characteristics (typ.) 8 7 6 5 30mA s VCE (sat) -- IC Temperature Characteristics (typ.) 0.75 I C /IB = 100 s IC -- VBE Temperature Characteristics (typ.) 7 6 (VCE = 1V) VCE (sat) (V) 20mA 10mA 5mA 3mA 5 0.5 Ta = -55C 25C 75C 150C IC (A) 4 3 2 1 0 0 1 2 3 4 IC (A) 4 3 2 1 Ta = 150C 75C 25C -55C 0.25 IB = 1mA 5 6 0 0.01 0 0.1 1 5 0 0.5 1.0 1.5 VCE (V) IC (A) VBE (V) s hFE -- IC Temperature Characteristics (typ.) 2000 1000 (VCE = 4V) s ton*tstg*tf -- IC Characteristics 10 5 s j-a -- t Characteristics Single pulse Dual transistor operated ton*tstg*tf (S) tstg 100 50 0.5 1.2 500 Ta = 150C 75C 25C -55C (C/W) hFE 1 0.5 10 5 1 0.5 0.1 0.0001 0.001 Single transistor operated 100 50 30 0.01 tf 0.1 ton 0 1 VCC = 12V IB1 = -IB2 = 30mA j-a 0.1 1 10 2 3 0.01 0.1 1 10 100 4.0 0.2 1000 IC (A) Ic (A) t (s) s VCE (sat) -- IB Temperature Characteristics (typ.) 0.75 IC = 1.2A s PT -- Ta Derating 20 (Tc = 25C) Equivalent Circuit Diagram VCE (sat) (V) 15 0.5 3 nk si at he 8 ith W ite fin in 0.25 Ta = 150C 75C 25C -55C PT (W) 10 2 5 Withou t heat sink 7 4 100 150 9 0 1 10 100 1000 0 0 50 IB (mA) Ta (C) 66 |
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